Insulated-Gate Bipolar Transistors (IGBTs) Industry
Description
An Insulated-Gate Bipolar Transistors (IGBT) module is a three-terminal semiconductor device with a huge range of bipolar current carrying capacity and high input impedance typically used as an electronic switch in a lot of applications such as electric cars, trains, air-conditioners as well as stereo systems with switching applications.
Demand Scenario
The global insulated-gate bipolar transistors (IGBT) market was USD 4.26 billion in 2018 and is estimated to reach USD 7.85 billion by 2025 at a CAGR of 9.12% during the forecast period.
Mentioned Company Profiles
Renesas Electronics Corporation
Infineon Technologies AG
Fuji Electric Co. Ltd
ROHM Co. Ltd.
Semikron International GmbH
Mitsubishi Electric Corp.
Toshiba Corp.
Hitachi Ltd.
Fairchild Semiconductor International, Inc.
ABB Ltd.
NXP Semiconductors N.V.
STMicroelectronics N.V.
IXYS Corporation
Monolithic Power Systems Designs
Semtech Corporation
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Drivers vs Constraints
The global insulated-gate bipolar transistors (IGBT) market is mainly driven by aggrandized demand for electric vehicle as well as a need for high voltage devices favor higher adoption of IGBT in energy & power, automotive, consumer electronics and also industries. Also, high-speed switching rate and optimized power loss by an IGBT module favor industries to opt for IGBT module thus driving its growth opportunities globally. However, the growth is hindered by current leakage at high temperatures while using it and also the high cost of the device while comparing to other MOSFETs.
Growth by Region
Asia Pacific accounted for the largest market share in 2018 owing to the increasing number of electric vehicles (EVs), advancements in consumer electronics and increased manufacturing of inverters and UPS in the region. North America, on the other hand, is also anticipated to observe significant growth during the forecasted period due to the growth of green energy and EV/HEV markets in the region.
Industry Trends and Updates
Infineon Technologies, a German semiconductor manufacturing company modules it’s high power IGBT up to 1200V in different topologies by offering up to 75A. This new package will help in serving the growing demand for high power density as well as highest density in discrete packages.
NXP Semiconductors N.V., a Dutch global semiconductor manufacturing company and the world’s largest supplier of automotive semiconductors had announced its agreement to acquire OmniPHY, one of the leading providers of automotive Ethernet subsystem technology. This agreement will help NXP to deliver the next generation of data transfer solutions to the carmakers.
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Table of Content
1. Research Methodology
2. Executive Summary
3. Market Overview
3.1. Definition
3.2. Industry Value Chain Analysis
3.3. Porter’s 5 Forces
3.4. Regulations
4. Market Dynamics
4.1. Introduction
4.2. Drivers
4.3. Constraints
4.4. Trends
5. Global Insulated-Gate Bipolar Transistors (IGBTs) Market Segmentation, Forecasts and Trends – by Type
5.1. Discrete IGBT
5.2. IGBT Module
5.3. Others
6. Global Insulated-Gate Bipolar Transistors (IGBTs) Market Segmentation, Forecasts and Trends – by Power Rating
6.1. Low Power
6.2. Medium Power
6.3. High Power
7. Global Insulated-Gate Bipolar Transistors (IGBTs) Market Segmentation, Forecasts and Trends – by End Use Industry
7.1. EV/HEV
7.2. Renewables
7.3. UPS
7.4. Industrial
7.5. Commercial
7.6. Others
8. Global Insulated-Gate Bipolar Transistors (IGBTs) Market Segmentation, Forecasts and Trends – by Region
8.1. North America
8.2. Europe
8.3. Asia-Pacific
8.4. South America
8.5. Middle East and Africa
9. Competitive Intelligence
9.1. Company Market Share Analysis
9.2. Industry M&As, Consolidations
10. Company Profiles
11. Investment Opportunities
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Continued…
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