DRAM Market Overview
DRAM market or dynamic random-access memory market is the category of memory that is characteristically used for program or data code that a computer processor requires to function efficiently. DRAM Market is a common variety of random-access memory (RAM) applied in workstations, servers, and personal computers (PCs). Random access facilitates the PC processor to have access into any part of the memory directly instead of having to proceed sequentially from a certain point of inception. RAM is positioned close to the system’s processor and it allows quicker access to data than storage media like solid-state drives and hard disk drives. Market Research Future (MRFR) has asserted in its latest report that the worldwide DRAM market is projected to spur at 28.70% CAGR during the period 2018 to 2023. Aspects such as increasing number of data centers, expanding sales of high-end smartphones, along with robust growth of the semiconductor market are partly driving the demand for the global DRAM market. Furthermore, rapid urbanization coupled with the growth of cutting-edge communication technologies is playing substantial role in driving growth opportunities for market players. Remarkable adoption rate of products like digital cameras, laptops/tablets, smartphones, etc. is also estimated to influence the DRAM market positively.
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Key Players
Global DRAM market is ruled by prominent players like Samsung Electronics Co., Ltd., Winbond Electronics Corporation, Kingston Technology Corporation, Powerchip Technology Corporation, Transcend Information, Inc., Integrated Silicon Solution Inc., Nanya Technology Corporation, Micron Technology, Inc., SK Hynix Inc., and ATP Electronics, Inc.
Market Segmentation
Global DRAM market is segmented based on technology, application, and type. Based on technology, the market is segmented into DDR5/GDDR5, DDR2, DDR4, and DDR3. The DDR4 segment is expected to represent the largest share of the DRAM market. The segment presently reflects a market worth of more than 38 bn and is projected to witness a striking CAGR during the review period. The GDDR5/ DDR5 segment is also anticipated to observe a healthy growth over the forecast period. Based on application, the market is segmented into mobile phones, gaming consoles, PCs/laptops, and networking devices. The PC/laptop segment held 43.4% market share during 2017 and is estimated to continue its dominance throughout 2023. The segment represented a CAGR of 31.50% between 2018 and 2023. The mobile phone segment is projected to represent the second spot over the assessment period. Based on type, the market is segmented into burst extended data output (BEDO), FPM (Fast Page Mode), extended data output (EDO), synchronous DRAM, and asynchronous DRAM. The synchronous DRAM (SDRAM) segment is likely to represent a leading position over the review period. By the conclusion of 2023, the synchronous DRAM is estimated to attain a market valuation in excess of USD 120 bn, reflecting growth at a healthy CAGR. Device manufacturers prefer the integration of SDRAM due to its high functional capabilities. Additionally, SDRAM is more effectual than traditional DRAMs.
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Regional Analysis
According to the report published by Market Research Future, the regional market for DRAM is segmented into the Middle East, Europe, North America, Africa, Latin America, and Asia Pacific. The APAC market is estimated to remain extremely lucrative over the review period. Asia Pacific represents the largest share of the worldwide DRAM market. Additionally, the DRAM market of APAC is predicted to witness the highest CAGR throughout 2023. This is mostly owing to the development of China’s electronics manufacturing hub. China’s growth as a notable manufacturing powerhouse catering to industries such as electronics, automotive, and consumer goods. Apart from China, economies such as Japan, South Korea, and Taiwan are also making significant contributions to boost the demand for DRAM in the Asia Pacific market. Asia Pacific market is followed by North America and Europe respectively.
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