RF Power Amplifier Global Market – Overview
The number of mobile users around the world are increasing and the consumption of smartphones is rising, the network service providers are moving from 2G to 3G and now to LTE which introduces the users to various features. RF Power amplifiers are required for communications in smartphones, many companies in semiconductor industry are adopting complementary metal-oxide-semiconductor (CMOS) technology. Trend towards LTE and 5G is driving the RF Power Amplifier Market growth across the globe. On the same platform, many developing countries are adopting LTE technology in their network infrastructure for better internet access and better communication through VoLTE. Thus, the increasing demand of RF power amplifiers from cellular networks for achieving efficient performance is fostering the growth of RF power amplifier market. Also, Internet of Things plays a vital role in various fields apart from communication networks, transport and energy use. Internet of things refers to a technology that connects all devices to a network. Internet ready and connective devices are achieved by IoT technology. This enables the flow of data creating a network of objects. Internet of Things leads to advanced use of internet which would result in developing device to device relationship. It has been studied that the IoT market is growing exponentially leading to the high demand for RF power amplifiers.
The RF Power Amplifier Market is expected to grow at approx. USD 11 Billion by 2023, at 16% of CAGR between 2017 and 2023.
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RF Power Amplifier Market Segmentation
The RF power amplifier market has been segmented on the basis of product and application. The application segment is bifurcated into consumer electronics, aerospace and defense, automotive, medical and others. The medical sub segment has various applications like MRI, radiation, ablation and others. RF power amplifiers are developed to acquire total precision for medical diagnostics. Owing to this, it is increasingly being used in medical applications to get more accurate results.
Market Research Analysis:
Deployment of RF power amplifiers depends on the end use application of that device. Factors like operating frequency, input power, linearity and others are taken into consideration while deploying RF power amplifiers. The RF power amplifier market is being studied for regions such as Asia Pacific, North America, Europe and Rest of the World. It has been observed that Asia Pacific is estimated to account for the largest share of the market and is projected to grow at the fastest rate during the forecast period. The growth in North America region is mainly dominated by Japan and China owing to the presence of established key players in the region and China being the manufacturing hub of electronic devices.
The prominent players in RF power amplifier market are – Qualcomm (U.S.), Analog Devices (U.S.), Skyworks Solutions, Inc. (U.S.), Broadcom Limited (Singapore), ANADIGICS, Inc. (U.S.), Murata Manufacturing Co., Ltd. (Japan), Infineon Technologies AG (Germany), NXP Semiconductors N.V. (Netherlands), Toshiba Corporation (Japan) and Mitsubishi Electric Corporation (Japan) among others.
December, 2017, Toshiba America Electronic Components, Inc., a committed technology leader, today announced a new IC that is compliant with the Bluetooth Low Energy (LE) core specification 4.2 – including support for a secure connection, LE privacy features and extended packet length. The new TC35679IFTG is designed for use in harsh automotive environments and extended temperature ranges. A mixed-signal device, the TC35679IFTG contains both analog RF and baseband digital parts. This enables it to provide a complete solution in a single, compact, low-profile (40-pin 6mm x 6mm x 1mm) QFN ‘wettable flank’ package with a pin pitch of 0.5mm. The TC35679 provides Bluetooth Host Control Interface (HCI) functions alongside low energy GATT profile functions. The new IC becomes a fully-fledged application processor when used in conjunction with external non-volatile memory. It can also be used in combination with an external host processor.
December, 2017, – Vangochip Technology, a world-class fabless semiconductor company delivering smart grid and IIoT communication solution, today announced its first-gen sub-GHz RF family VC7000 passed the Wi-SUN Alliance PHY Certification. The certification signifies Vangochip’s VC7000 family is formally tested and validated to have seamless interoperability and conformity to the industry-agreed IEEE 802.15.4g standards. VC7000 low power sub-GHz RF transceiver features a very wide range of RF bands from 169 to 960MHz. State-of-the-art sensitivity and selectivity with block-resilient IIP3 of -10dBm make it an ideal solution for robust smart utility networks. Adjacent channel rejection can achieve better than 40dB even at data rate > 50kbps. With a dual power amplifier of +20/+13dBm and T/R switch integrated, RBOM is greatly reduced.
June, 2017, – Analog Devices, Inc. today introduced a wideband gallium nitride (GaN) power amplifier that offers best-in-class performance within a compact design. Covering the 300 MHz to 6 GHz spectrum, the highly integrated HMC8205 provides significant benefits for system designers of applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification test equipment that require pulse or continuous wave (CW) support. The HMC8205 GaN MMIC amplifier offers unmatched integration, gain, efficiency, and wide bandwidth in a small footprint that requires minimal external circuitry, thereby reducing overall component count and board space.
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- Technology Investors
- Research/Consultancy Firms
- Original equipment manufacturers (OEMs)
- OEM technology solution providers
- Amplifiers Manufacturers
- Amplifiers Suppliers
- Manufacturing Companies
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