Increasing demand for the improved power electronics designs owing to electrical transmission efficiency is expected to augment the market growth n coming years. Newly introduced concept of green IT concept in organizations to prevent power losses as well as to prevent the environment is expected to spur the market growth. Increasing substitution demand and positive developments in the data center market is projected as the drivers of IGBT and super junction MOSFET market over the forecast period. Increasing shifts towards hybrid electric vehicles and electric vehicles so as to reduce carbon footprint and meet emission norms is anticipated to have significant impact on the market growth. However, accessibility of alternatives such as compound semiconductor materials including Gallium-Nitride (GaN) and silicon carbide is expected to restrain market growth over the forecast period.
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IGBT and super junction MOSFET includes product such as discrete products and modules. Discrete IGBT is used largely in high power applications as well as consumer goods. Hence increasing demand of these solutions is going to spur the market growth. Continuous growth in wind & solar power generation, high frequency application and general-purpose inverters is expected to increase the growth of the market in coming years. Power adaptor miniaturization uses MOSFET which is going to enhance the market growth. Discrete product growth is expected to be characterized to power supply application requirement. Super junction MOSFET modules are projected as one of the prominent drivers of market share in the inverter segment.
Application segment includes consumer converters/adaptors, PV inverters, uninterruptible power supply (UPS), industrial, EV/HEV applications and motor drives. Adaptors/chargers demand is going to increase owing to increasing number of smartphones and tablets. This growing demand is going to fuel the market growth.
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Owing to the large number of features such as infotainment, electric power steering, HVAC and lighting facilitated by IGBT & super junction MOSFET, electric and hybrid electric vehicles are expected to witness the growth. Controlled motor drive system requirement is expected to augment the market growth in the motor drives segment over the forecast period.
The existence of large plants in solar sector in Asia pacific countries such as China, Japan and India is going to impact the market growth significantly in Asia Pacific. Asia pacific is going to witness the fastest growth due to developments in PV inverter manufacturing and in automotive sector. Furthermore, high speed train web is anticipated as the driver of power semiconductors.
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Increasing wind turbine installation owing to increasing demand of renewable energy sources is expected to fuel the U.S. region market in North America. North American IGBT market is expected to witness the high growth in coming years owing to growing HEV, motor drives and industrial application sectors.
IGBT market key players include Mitsubishi Electric, Infineon Technologies and Fuji Electric. MOSFET market key players include STMicroelectronics and Infineon. Strategic initiatives such as mergers, acquisitions and vertical integration among organizations are expected to consolidate global market and expand emerging as well as established regional markets.
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